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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB829 DESCRIPTION With TO-3PN package Complement to type 2SD1065 Wide area of safe operation Low collector saturation voltage : VCE(sat) =-0.5V max. APPLICATIONS Relay drivers, High-speed inverters,converters General high-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Emitter PARAMETER Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) SEM GE Open base OND IC TOR UC VALUE -60 -50 -6 -15 -20 CONDITIONS UNIT V V V A A W ae ae Open emitter Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 90 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB829 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1mA ;RBE= IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-8A ,IB=-0.4A VCB=-40V, IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-8A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -50 -60 -6 -0.26 -0.5 -0.1 -0.1 280 TYP. MAX UNIT V V V V mA mA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton tstg tf Transition frequency HAN C S 140-280 Turn-on time Storage time Fall time IN SEM GE OND IC TOR UC 20 0.20 0.10 0.50 MHz |I |I |I s s s IC=-2.0A; IB1=-IB2=-0.2A VCC=20V;RL=10| hFE-1 Classifications Q 70-140 R 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB829 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB829 SEM GE HAN INC OND IC TOR UC 4 |
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